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GS74104TP-10IT 参数 Datasheet PDF下载

GS74104TP-10IT图片预览
型号: GS74104TP-10IT
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX4, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 410 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74104TP/J
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
–0.5 to +4.6
–0.5 to V
DD
+0.5
(≤ 4.6 V max.)
–0.5 to V
DD
+0.5
(≤ 4.6 V max.)
0.7
–55 to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
DD
V
IH
V
IL
T
Ac
T
A
I
Min
3.0
3.135
2.0
–0.3
0
–40
Typ
3.3
3.3
Max
3.6
3.6
V
DD
+0.3
0.8
70
85
Unit
V
V
V
V
o
C
o
C
Note:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.07 1/2001
3/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.