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GS71208TP-8 参数 Datasheet PDF下载

GS71208TP-8图片预览
型号: GS71208TP-8
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 1Mb的SRAM的异步 [128K x 8 1Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 382 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS71208TP
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
V
IH
= 2.4 V
V
IL
= 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Output Load 1
DQ
50Ω
VT = 1.4 V
30pF
1
Output Load 2
3.3 V
DQ
5pF
1
589Ω
434Ω
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
AC Characteristics
Read Cycle
Parameter
Read cycle time
Address access time
Chip enable access time (CE)
Output enable to output valid (OE)
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in High Z (CE)
Output disable to output in High Z (OE)
* These parameters are sampled and are not 100% tested
Symbol
t
RC
t
AA
t
AC
t
OE
t
OH
t
LZ
*
t
OLZ
*
t
HZ
*
t
OHZ
*
-8
Min
8
3
3
0
Max
8
8
3.5
4
3.5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev: 1.03 10/2001
5/11
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.