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GS71208TP-8 参数 Datasheet PDF下载

GS71208TP-8图片预览
型号: GS71208TP-8
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 1Mb的SRAM的异步 [128K x 8 1Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 382 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS71208TP
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
–0.5
to +4.6
–0.5
to V
DD
+0.5
(≤ 4.6 V max.)
–0.5
to V
DD
+0.5
(≤ 4.6 V max.)
0.7
–55
to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Recommended Operating Conditions
Parameter
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
IH
V
IL
T
Ac
T
A
I
Min
3.135
2.0
–0.3
0
–40
Typ
3.3
Max
3.6
V
DD
+0.3
0.8
70
85
Unit
V
V
V
o
C
o
C
Note:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than
–2
V and not exceed 20 ns.
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Max
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
= 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Rev: 1.03 10/2001
3/11
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.