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GS71024T-10 参数 Datasheet PDF下载

GS71024T-10图片预览
型号: GS71024T-10
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×24的1.5Mb异步SRAM [64K x 24 1.5Mb Asynchronous SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 279 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS71024T/U  
Recommended Operating Conditions  
Parameter  
Supply Voltage for -10/12/15  
Supply Voltage for -8  
Input High Voltage  
Symbol  
Minimum  
3.0  
Typical  
Maximum  
Unit  
V
3.3  
3.3  
3.6  
3.6  
V
V
V
V
DD  
V
3.135  
2.0  
DD  
V
V
+ 0.3  
DD  
IH  
V
Input Low Voltage  
–0.3  
0.8  
IL  
Ambient Temperature,  
Commercial Range  
o
T
0
70  
85  
C
Ac  
Ambient Temperature,  
Industrial Range  
o
T
–40  
C
Ai  
Notes:  
1. Input overshoot voltage should be less than V + 2 V and not exceed 20 ns.  
DD  
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.  
Capacitance  
Parameter  
Input Capacitance  
I/O Capacitance  
Symbol  
Test Condition  
Maximum  
Unit  
pF  
C
V
= 0 V  
= 0 V  
5
7
IN  
IN  
C
V
OUT  
pF  
OUT  
Notes:  
1. Tested at T = 25°C, f = 1 MHz  
A
2. These parameters are sampled and are not 100% tested  
DC I/O Pin Characteristics  
Parameter  
Symbol  
Test Conditions  
Minimum  
Maximum  
I
V = 0 to V  
IN DD  
Input Leakage Current  
–1uA  
1uA  
IL  
Output High Z, V  
= 0  
OUT  
I
Output Leakage Current  
–1uA  
1uA  
OL  
to V  
DD  
V
I
= –4mA  
= +4mA  
Output High Voltage  
Output Low Voltage  
2.4  
OH  
OH  
V
I
0.4 V  
OL  
OL  
Rev: 1.05 11/2004  
4/13  
© 1999, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.