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GS70328TS-12IT 参数 Datasheet PDF下载

GS70328TS-12IT图片预览
型号: GS70328TS-12IT
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8 256Kb的SRAM的异步 [32K x 8 256Kb Asynchronous SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 232 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS70328SJ/TS  
Recommended Operating Conditions  
Parameter  
Supply Voltage for -7/8/10/12  
Input High Voltage  
Symbol  
Minimum  
3.0  
Typical  
Maximum  
Unit  
V
3.3  
3.6  
V
V
V
DD  
V
+ 0.3  
VIH  
VIL  
2.0  
DD  
Input Low Voltage  
–0.3  
0.8  
Ambient Temperature,  
Commercial Range  
o
TAc  
TAI  
0
70  
85  
C
Ambient Temperature,  
Industrial Range  
o
–40  
C
Notes:  
1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.  
DD  
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.  
Capacitance  
Parameter  
Input Capacitance  
Output Capacitance  
Symbol  
Test Condition  
Maximum  
Unit  
pF  
C
V
= 0 V  
= 0 V  
5
7
IN  
IN  
C
V
OUT  
pF  
OUT  
Notes:  
1. Tested at TA = 25°C, f = 1 MHz  
2. These parameters are sampled and are not 100% tested.  
DC I/O Pin Characteristics  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
V
= 0 to V  
DD  
Input Leakage Current  
IIL  
–1uA  
1uA  
IN  
Output High Z  
= 0 to V  
Output Leakage Current  
ILO  
–1uA  
1uA  
V
OUT  
DD  
Output High Voltage  
Output Low Voltage  
VOH  
VOL  
IOH = –4 mA  
ILO = +4 mA  
2.4 V  
0.4 V  
Rev: 1.11 11/2004  
3/11  
© 1999, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.