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GS1284Z18GB-200I 参数 Datasheet PDF下载

GS1284Z18GB-200I图片预览
型号: GS1284Z18GB-200I
PDF下载: 下载PDF文件 查看货源
内容描述: [SRAM]
分类和应用: 静态存储器
文件页数/大小: 29 页 / 644 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS81284Z18/36B-250/200/167  
V
Range Logic Levels  
DD2  
Parameter  
Input High Voltage  
Input Low Voltage  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Notes  
V
0.6*V  
V
+ 0.3  
DD  
IH  
DD  
V
0.3*V  
DD  
0.3  
V
IL  
Notes:  
1. Input Under/overshoot voltage must be 2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
DDn  
2.  
V
(max) is voltage on V  
pins plus 0.3 V.  
DDQ  
IHQ  
Recommended Operating Temperatures  
Parameter  
Symbol  
Min.  
0
Typ.  
25  
Max.  
70  
Unit  
°C  
Notes  
T
Ambient Temperature (Commercial Range Versions)  
2
2
A
T
Ambient Temperature (Industrial Range Versions)  
40  
25  
85  
°C  
A
Notes:  
1. The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance  
specifications quoted are evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
DDn  
Undershoot Measurement and Timing  
Overshoot Measurement and Timing  
V
IH  
50% tKC  
V
+ 2.0 V  
DD  
V
SS  
50%  
50%  
V
DD  
V
2.0 V  
SS  
50% tKC  
V
IL  
Capacitance  
o
(T = 25 C, f = 1 MHZ, V = 2.5 V)  
A
DD  
Parameter  
Symbol  
Test conditions  
Typ.  
Max.  
Unit  
pF  
C
V
= 0 V  
= 0 V  
Input Capacitance  
4
6
5
7
IN  
IN  
C
V
OUT  
Input/Output Capacitance  
pF  
I/O  
Note:  
These parameters are sample tested.  
Rev: 1.02 7/2010  
13/29  
© 2007, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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