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MBM29LV160TE-70 参数 Datasheet PDF下载

MBM29LV160TE-70图片预览
型号: MBM29LV160TE-70
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ( 2M ×8 / 1M ×16 )位 [16M (2M X 8/1M X 16) BIT]
分类和应用:
文件页数/大小: 59 页 / 617 K
品牌: FUJITSU [ FUJITSU ]
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MBM29LV160TE/BE-70/90/12  
(Continued)  
The device also features a sector erase architecture. The sector mode allows each sector to be erased and  
reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.  
The device features single 3.0 V power supply operation for both read and write functions. Internally generated  
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically  
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,  
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been  
comleted, the device internally resets to the read mode.  
The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em-  
bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then  
reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset  
occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically  
reset to the read mode and will have erroneous data stored in the address locations being programmed or  
erased. These locations need re-writing after the Reset. Resetting the device enables the system’s micropro-  
cessor to read the boot-up firmware from the Flash memory.  
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest  
levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits  
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word  
at a time using the EPROM programming mechanism of hot electron injection.  
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  
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PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  
48-pin plastic CSOP  
48-pin plastic FBGA  
(LCC-48P-M03)  
(BGA-48P-M11)  
2