MBM29LV008TA-70/-90/-12/MBM29LV008BA-70/-90/-12
Table 6 MBM29LV008TA/008BA Standard Command Definitions
Fourth Bus
First Bus Second Bus Third Bus
Write Cycle Write Cycle Write Cycle
Fifth Bus
Sixth Bus
Bus
Write
Read/Write
Cycle
Write Cycle Write Cycle
Command
Sequence
Cycles
Req’d
Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
Read/Reset
Read/Reset
Autoselect
Program
1
3
3
4
6
6
XXXH F0H
—
—
—
—
—
RA
—
—
RD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
555H AAH 2AAH 55H 555H F0H
555H AAH 2AAH 55H 555H 90H
555H AAH 2AAH 55H 555H A0H
PA
PD
Chip Erase
Sector Erase
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H
555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SA 30H
Sector Erase Suspend
Sector Erase Resume
Erase can be suspended during sector erase with Addr. (“H” or “L”). Data (B0H)
Erase can be resumed after suspend with Addr. (“H” or “L”). Data (30H)
Notes: 1. Address bits A11 to A19 = X = “H” or “L” for all address commands except or Program Address (PA) and
Sector Address (SA)
2. Bus operations are defined in Table 2.
3. RA = Address of the memory location to be read
PA = Address of the memory location to be programmed
Addresses are latched on the falling edge of the write pulse.
SA = Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, and A13 will
uniquely select any sector.
4. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
5. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
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