MB90480/485 Series
•Flash Memory Program/Erase Characteristics
Value
Typ
Parameter
Conditions
Unit
Remarks
Min
Max
Excludes 00H programming
prior erasure
Sector erase time
Chip erase time
⎯
1
7
15
s
s
TA = + 25 °C,
VCC = 3.0 V
Excludes 00H programming
prior erasure
⎯
⎯
Word (16-bit)
programming time
⎯
10000
10
16
⎯
⎯
3600
⎯
µs Excludes system-level overhead
cycle
Program/Erase cycle
⎯
Flash Memory Data
hold time
Average
TA = + 85 °C
⎯
year
*
* : The value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at +85 °C) .
• Use of the X0/X1, X0A/X1A pins
When used with a crystal oscillator
X1
X0
X0A
X1A
Internal
damping
Pull-up
resistance 1
resistance 0
Damping
resistance 1
Damping
resistance 2
In normal use :
Internal damping resistance 0 : Typ 600 Ω
Consult with the oscillator manufacturer.
Pull-up resistance 1,
C2
C1
C3
C4
Damping resistance 1, 2,
C1 to C4
•Sample use with external clock input
MB90480/485 series
X0
OPEN
X1
112
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