FLC257MH-8
C-Band Power GaAs FET
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
POWER DERATING CURVE
1000
750
V
=0V
16
GS
-0.5V
-1.0V
12
8
500
250
-1.5V
-2.0V
4
0
2
4
6
8
10
0
50 100 150 200
Drain-Source Voltage (V)
Case Temperature (°C)
OUTPUT POWER
& IM vs. INPUT POWER
3
V
1
=10V
DS
f = 8.5 GHz
29
27
f = 8.51GHz
2
-10
2-tone Test
25
23
21
19
-20
-30
-40
-50
P
out
IM
3
12 14 16 18 20
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
P
1dB
& η
add
vs. V
OUTPUT POWER vs. INPUT POWER
DS
V
I
= +10V
DS
≈ 0.6 I
f=8.5 GHz
DS
35
DS
DSS
I
≈ 0.6 I
DSS
f = 8.5 GHz
50
40
30
35
34
33
33
31
29
27
P
out
50
40
30
20
10
P
1dB
η
add
η
add
25
23
17 19 21 23 25 27
Input Power (dBm)
8
9
10
Drain-Source Voltage (V)
2
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