FLC257MH-8
C-Band Power GaAs FET
FEATURES
• High Output Power: P
= 34.0dBm(Typ.)
1dB
• High Gain: G
= 8.0dB(Typ.)
= 35%(Typ.)
1dB
• High PAE: η
add
• ProvenReliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC257MH-8 is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
15
-65 to +175
175
W
°C
°C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200Ω.
3. The operating channel temperature (T ) should not exceed 145°C.
ch
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
I
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
-
1000 1500
mA
DS
DS
DS
DSS
g
m
-
= 5V, I
=600mA
=50mA
500
mS
V
DS
Pinch-off Voltage
V
p
= 5V, I
DS
-1.0
-5
-2.0 -3.5
Gate Source Breakdown Voltage
V
-
-
= -50µA
V
GSO
GS
Output Power at 1dB G.C.P.
P
1dB
32.5 34.0
-
dBm
V
= 10V,
DS
I
= 0.6 I
DS
DSS (Typ.),
-
Power Gain at 1dB G.C.P.
Power-added Efficiency
G
7.0
8.0
dB
1dB
f = 8.5 GHz
η
add
-
%
-
-
35
8
R
Thermal Resistance
Channel to Case
10
°C/W
th
G.C.P.: Gain Compression Point
CASE STYLE: MH
Edition 1.1
July 1999
1
FUJITSU [ FUJITSU ]
