November 1996
Revision 1.0
DATA SHEET
EDC4BV724(2/4)-(60/70)(J/T)G-S
32MByte (4M x 72) CMOS
EDO DRAM Module - 3.3V (ECC), Buffered
General Description
The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module
organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
The module utilizes eighteen, Fujitsu MB81V1(7/6)405A-(60/70)(PJ/FN) CMOS 4Mx4 EDO dynamic RAMs in a surface mount
package on an epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.
Control lines provided are such that Dword control is possible. All signals are buffered (74ABT16244 or equivalent) except RAS,
data and IDs.
Features
• High Density: 32MByte
• Fast Access Time of 60/70 ns (max.)
• Low Power:
7.2/6.2 W (max.) - Active (60-70ns): 2KR
5.4/4.8 W (max.) -Active (60/70 ns): 4KR
360mW (max.) - Standby (LVTTL)
296mW (max.) - Standby (CMOS)
• LVTTL-compatible inputs and outputs
• Separate power and ground planes to improve noise immunity
• Single power supply of 3.3V±0.3V
• Height: 1.00 inch
• 2K/4K Refresh Cycles
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperate
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
-0.5 to +4.6
22
0 to +70
-55 to +125
-50 to +50
Unit
V
W
°
C
°
C
mA
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to +70
°C)
Symbol
V
CC
V
SS
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High voltage
Input Low voltage
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
Fujitsu Microelectronics, Inc.
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
