MBM29LV800TE/BE60/70/90
■ FEATURES
• 0.23 µm Process Technology
• Single 3.0 V Read, Program, and Erase
Minimized system level power requirements
• Compatible with JEDEC-standard Commands
Use the same software commands as E2PROMs
• Compatible with JEDEC-standard World-wide Pinouts
48-pin TSOP (1) (Package suffix : TN Normal Bend Type)
48-pin CSOP (Package suffix : PCV)
48-ball FBGA (Package suffix : PBT)
• Minimum 100,000 Program/Erase Cycles
• High Performance
70 ns maximum access time
• Sector Erase Architecture
One 8 Kwords, two 4 Kwords, one 16 Kwords, and fifteen 32 Kwords sectors in word mode
One 16 Kbytes, two 8 Kbytes, one 32 Kbytes, and fifteen 64 Kbytes sectors in byte mode
Any combination of sectors can be concurrently erased, and also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM* Algorithm
Automatically pre-programs and erases the chip or any sector.
• Embedded ProgramTM* Algorithm
Automatically writes and verifies data at specified address.
• Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion
• Ready/Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode
When addresses remain stable, MBM29LV800TE/BE automatically switch themselves to low power mode.
• Low VCC Write Inhibit ≤ 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device.
• Sector Protection
Hardware method disables any combination of sectors from program or erase operations.
• Sector Protection Set Function by Extended Sector Protection Command
• Fast Programming Function by Extended Command
• Temporary Sector Unprotection
Temporary sector unprotection via the RESET pin
* : Embedde EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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