FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20888-6E
FLASH MEMORY
CMOS
8 M (1 M
×
8/512 K
×
16) BIT
MBM29LV800TE
60/70/90
/MBM29LV800BE
60/70/90
s
DESCRIPTION
The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or
512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48-
ball FBGA package. These devices are designed to be programmed in a system with the standard system 3.0 V
V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be
reprogrammed in standard EPROM programmers.
(Continued)
s
PRODUCT LINE UP
Part No.
Ordering Part No.
+0.3
V
V
CC
=
3.3 V
−0.3
V
+0.6
V
V
CC
=
3.0 V
−0.3
V
MBM29LV800TE/BE
60
60
60
30
70
70
70
30
90
90
90
35
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
s
PACKAGES
48-pin Plastic TSOP (1)
48-pin Plastic CSOP
48-ball Plastic FBGA
(FPT-48P-M19)
(LCC-48P-M03)
(BGA-48P-M20)
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
