1MBI1000VXB-170EL-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
T
j
= 25°C / chip
2000
1800
1600
Collector current: I
C
[A]
1400
1200
1000
800
600
400
200
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
8V
10V
V
GE
=20V
15V
12V
Collector current: I
C
[A]
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
T
j
= 150°C / chip
V
GE
= 20V
15V
12V
10V
8V
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
= 15V / chip
2000
1600
Collector Current: I
C
[A]
1400
1200
1000
800
600
400
200
0
0
1
2
3
4
5
Collector-Emitter Voltage: V
CE
[V]
Collector-Emitter Voltage: V
CE
[V]
1800
T
j
=25°C
125°C
150°C
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
T
j
= 25°C / chip
10
8
6
4
2
0
5
10
15
20
25
Gate-Emitter Voltage: V
GE
[V]
I
C
=2000A
I
C
=1000A
I
C
=500A
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
V
GE
= 0V, ƒ= 1MHz, T
j
= 25°C
1000
Gate Capacitance: C
ies
, C
oes
, C
res
[nF]
***
20.00
15.00
Gate-Emitter voltage: V
GE
[V]
100
C
ies
10.00
5.00
0.00
-5.00
-10.00
-15.00
Dynamic Gate Charge (typ.)
V
CC
=900V, I
C
=1000A, T
j
= 25°C
1000
V
CE
Collector-Emitter voltage: V
CE
[V]
750
500
250
V
GE
0
-250
-500
-750
0
10
C
res
C
oes
1
0
10
20
30
-20.00
-1500 -1000 -5000
-1000
5000 10000 15000
Collector-Emitter voltage: V
CE
[V]
Gate charge: Q
g
[nC]
3
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