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1MBI1000VXB-170EL-50 参数 Datasheet PDF下载

1MBI1000VXB-170EL-50图片预览
型号: 1MBI1000VXB-170EL-50
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor,]
分类和应用:
文件页数/大小: 8 页 / 579 K
品牌: FUJITSU [ FUJITSU COMPONENT LIMITED. ]
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http://www.fujielectric.com/products/semiconductor/
1MBI1000VXB-170EL-50
IGBT MODULE (V series)
1700V / 1000A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
NPC 3-level Inverter
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at T
C
=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
I
C
Conditions
Continuous
1ms
1ms
1 device
Continuous
1ms
T
C
=25°C
T
C
=100°C
Collector current
Collector Power Dissipation
Reverse voltage for FWD
Forword current for FWD
Junction temperature
Operating junction temperature
(under switching conditions)
Case temperature
Storage temperature
between terminal and copper base (*1)
Isolation voltage
between thermistor and others (*2)
Mounting
Screw Torque
Main Terminals
(*3)
Sense Terminals
I
C
pluse
-I
C
-I
C
pluse
P
C
V
R
I
F
I
F pulse
T
j
T
jop
T
C
T
stg
V
iso
-
-
-
Maximum ratings
1700
±20
1400
1000
2000
1000
2000
6250
1700
1000
2000
175
150
150
-40 ~ +150
Units
V
V
A
W
V
A
°C
AC : 1min.
M5
M8
M4
4000
6.0
10.0
2.1
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~ 6.0 Nm (M5)
Recommendable Value : Main Terminals
8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
1