6MBP25RA120
IGBT-IPM
Reversed biased safe operating area
<
Transient therm al resista nce
Vcc=15V,Tj 125°C
=
350
300
250
200
150
100
50
10
FW D
IGBT
1
SCSOA
(non-repetitive pulse)
0.1
RBSOA
(Repetitive pulse)
0
0.01
0.001
0
200
400
600
800
1000
1200
1400
0.01
0.1
1
Collector-Emitter voltage : Vce (V)
P ulse width :P w (sec)
Power derating for FW D
(per device)
Power derating for IGBT
(per device)
100
80
60
40
20
0
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100 120 140
160
C ase Tem perature : T c (°C)
Case Tem perature : Tc (°C)
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=25°C
Switching Loss vs. C ollector Current
Edc=600V,Vcc=15V,Tj=125°C
12
10
8
12
10
8
Eon
Eon
6
6
Eoff
4
4
Eoff
Err
Err
2
2
0
0
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
Collector current : Ic (A)
Collector current : Ic (A)
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