6MBP25RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Symbol Condition
Min.
3
Typ.
Max.
18
Unit
mA
mA
V
fsw=0 to 15kHz Tc=-20 to 100°C *7
Iccp
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
-
-
fsw=0 to 15kHz Tc=-20 to 100°C *7
ICCN
Vin(th)
10
65
ON
1.00
1.25
1.35
1.70
OFF
V
1.60
8.0
1.95
Rin=20k ohm
V
VZ
Input zener voltage
-
-
VDC=0V, Ic=0A, Case temperature
°C
°C
°C
°C
A
TCOH
TCH
TjOH
TjH
Over heating protection temperature level
Hysteresis
110
-
125
-
150
-
20
-
-
-
-
-
surface of IGBT chips
Tj=125°C
IGBT chips over heating protection temperature level
Hysteresis
-
20
IOC
Collector current protection level
Over current protection delay time
Under voltage protection level
Hysteresis
INV
38
-
-
Tj=25°C
Fig.2
µs
V
tDOC
VUV
VH
10
11.0
-
12.5
V
0.2
1.5
-
-
-
ms
µs
ohm
tALM
tSC
Alarm signal hold time
2
-
Tj=25°C
Fig.3
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM
-
12
RALM
1425
1500
1575
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Symbol Condition
Min.
Typ.
Max.
Unit
µs
Switching time (IGBT)
ton
toff
trr
IC=25A, VDC=600V
0.3
-
-
-
-
-
-
3.6
µs
Switching time (FWD)
IF=25A, VDC=600V
0.4
µs
Thermal characteristics( Tc=25°C)
Item
Symbol
Typ.
Max.
0.63
Unit
Junction to Case thermal resistance
INV
IGBT
FWD
Rth(j-c)
Rth(j-c)
Rth(c-f)
-
-
°C/W
°C/W
°C/W
1.33
-
Case to fin thermal resistance with compound
0.05
Recommendable value
Item
Symbol
Min.
200
13.5
Typ.
Max.
800
16.5
20
Unit
V
DC bus voltage
VDC
VCC
fSW
-
-
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
15
-
V
1
kHz
N·m
N·m
Screw torque
Mounting (M5)
Terminal (M5)
2.5
2.5
-
3.0
-
-
3.0
FUJI [ FUJI ELECTRIC ]
