Switching time vs. RG
Dynamic input characteristics
Tj=25°C
VCC=600V, IC=300A, VGE=±15V, Tj=25°C
1000
800
600
400
200
0
25
20
VCC=400V
toff
600V
800V
ton
1000
15
10
tr
tf
5
0
100
1
10
0
500 1000 1500 2000 2500 3000 3500 4000
Gate charge QG [nC]
:
W
[ ]
Gate resistance : RG
Forward current vs. Forward voltage
VGE=OV
Reverse recovery characteristics
trr, Irr vs. IF
Tj=125°C 25°C
trr 125°C
Irr 125°C
600
400
200
0
Irr 25°C
trr 25°C
100
0
1
2
3
4
5
0
200
400
600
Forward voltage : VF [V]
Forward current : IF [A]
Reversed biased safe operating area
Transient thermal resistance
W
+VGE=15V, -VGE<15V, Tj<125°C, RG>2.7
3000
2500
2000
1500
1000
500
Diode
0,1
IGBT
SCSOA
(non-repetitive pulse)
0,01
RBSOA (Repetitive pulse)
0,001
0
0,001
0,01
0,1
1
0
200
400
600
800
1000
1200
Collector-Emitter voltage : VCE [V]
Pulse width : PW [sec]
FUJI [ FUJI ELECTRIC ]
