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1MBI300NP-120 参数 Datasheet PDF下载

1MBI300NP-120图片预览
型号: 1MBI300NP-120
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块( N系列) [IGBT MODULE(N series)]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 100 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号1MBI300NP-120的Datasheet PDF文件第2页浏览型号1MBI300NP-120的Datasheet PDF文件第3页浏览型号1MBI300NP-120的Datasheet PDF文件第4页  
IGBT MODULE ( N series )  
n Outline Drawing  
n Features  
Square RBSOA  
Low Saturation Voltage  
Less Total Power Dissipation  
Improved FWD Characteristic  
Minimized Internal Stray Inductance  
Overcurrent Limiting Function (4~5 Times Rated Current)  
n Applications  
High Power Switching  
A.C. Motor Controls  
D.C. Motor Controls  
Uninterruptible Power Supply  
n Maximum Ratings and Characteristics  
n Equivalent Circuit  
Absolute Maximum Ratings ( Tc=25°C)  
Items  
Collector-Emitter Voltage  
Gate -Emitter Voltage  
Symbols  
Ratings  
1200  
± 20  
Units  
V
V
VCES  
VGES  
Continuous  
1ms  
Continuous  
1ms  
IC  
300  
600  
300  
600  
Collector  
Current  
IC PULSE  
-IC  
-IC PULSE  
A
Max. Power Dissipation  
Operating Temperature  
Storage Temperature  
Isolation Voltage  
PC  
Tj  
Tstg  
Vis  
Mounting *1  
Terminals *2  
Terminals *3  
2100  
+150  
-40 ~ +125  
2500  
3.5  
W
°C  
°C  
V
A.C. 1min.  
Screw Torque  
4.5  
1.7  
Nm  
Note: *1:Recommendable Value; 2.5 ~ 3.5 Nm (M5) or (M6)  
*2:Recommendable Value; 3.5 ~ 4.5 Nm (M6)  
*3:Recommendable Value; 1.3 ~ 1.7 Nm (M4)  
Electrical Characteristics ( at Tj=25°C )  
Items  
Zero Gate Voltage Collector Current  
Gate-Emitter Leackage Current  
Gate-Emitter Threshold Voltage  
Collector-Emitter Saturation Voltage  
Input capacitance  
Symbols  
ICES  
IGES  
VGE(th)  
VCE(sat)  
Cies  
Coes  
Cres  
tON  
tr  
tOFF  
tf  
VF  
trr  
Test Conditions  
VGE=0V VCE=1200V  
VCE=0V VGE=± 20V  
VGE=20V IC=300mA  
VGE=15V IC=300A  
VGE=0V  
VCE=10V  
f=1MHz  
VCC=600V  
IC=300A  
Min.  
Typ.  
Max.  
4.0  
60  
7.5  
3.3  
Units  
mA  
µA  
V
4.5  
V
48000  
17400  
15480  
0.65  
0.25  
0.95  
Output capacitance  
Reverse Transfer capacitance  
pF  
1.2  
0.6  
1.5  
0.5  
3.0  
350  
Turn-on Time  
Turn-off Time  
µs  
VGE=± 15V  
RG=2.7W  
IF=300A VGE=0V  
IF=300A  
0.35  
Diode Forward On-Voltage  
Reverse Recovery Time  
V
ns  
Thermal Characteristics  
Items  
Symbols  
Rth(j-c)  
Rth(j-c)  
Test Conditions  
Min.  
Typ.  
Max.  
0.06  
0.12  
Units  
IGBT  
Thermal Resistance  
Diode  
°C/W  
Rth(c-f)  
With Thermal Compound  
0.0125