128 KByte Flash Module (S12FTMRC128K1V1)
13.1.2 Features
13.1.2.1 P-Flash Features
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128 Kbytes of P-Flash memory composed of one 128 Kbyte Flash block divided into 256 sectors
of 512 bytes
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Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
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Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and phrase program operation
Ability to read the P-Flash memory while programming a word in the D-Flash memory
Flexible protection scheme to prevent accidental program or erase of P-Flash memory
13.1.2.2 D-Flash Features
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4 Kbytes of D-Flash memory composed of one 4 Kbyte Flash block divided into 16 sectors of 256
bytes
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Single bit fault correction and double bit fault detection within a word during read operations
Automated program and erase algorithm with verify and generation of ECC parity bits
Fast sector erase and word program operation
Protection scheme to prevent accidental program or erase of D-Flash memory
Ability to program up to four words in a burst sequence
13.1.2.3 Other Flash Module Features
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No external high-voltage power supply required for Flash memory program and erase operations
Interrupt generation on Flash command completion and Flash error detection
Security mechanism to prevent unauthorized access to the Flash memory
13.1.3 Block Diagram
The block diagram of the Flash module is shown in Figure 13-1.
S12P-Family Reference Manual, Rev. 1.13
Freescale Semiconductor
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