V
DD
= 28 Vdc, I
DQ
= 1500 mA, Pulsed CW, 10
sec(on),
10% Duty Cycle
Max Output Power
f
(MHz)
2110
2140
2170
Z
source
()
1.20 - j6.00
1.70 - j6.40
1.70 - j6.80
Z
in
()
1.20 + j5.90
1.50 + j6.30
1.75 + j6.70
Z
load (1)
()
1.50 - j3.90
1.60 - j4.00
1.50 - j4.00
Max
Linear
Gain (dB)
17.7
17.7
17.8
P1dB
(dBm)
54.3
54.3
54.3
(W)
269
269
269
D
(%)
55.4
55.1
54.7
AM/PM
()
11
10
11
(dBm)
55.2
55.2
55.2
(W)
331
331
331
P3dB
D
(%)
57.0
56.0
56.0
AM/PM
()
16
15
16
(1) Load impedance for optimum P1dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Z
source
Z
in
Device
Under
Test
Z
load
Output Load Pull
Tuner and Test
Circuit
Figure 9. Load Pull Performance — Maximum P1dB Tuning
V
DD
= 28 Vdc, I
DQ
= 1500 mA, Pulsed CW, 10
sec(on),
10% Duty Cycle
Max Drain Efficiency
f
(MHz)
2110
2140
2170
Z
source
()
1.20 - j6.00
1.70 - j6.40
1.70 - j6.80
Z
in
()
1.20 + j5.93
1.40 + j6.30
1.80 + j6.80
Z
load (1)
()
2.10 - j2.41
1.80 - j2.60
1.70 - j2.60
Max
Linear
Gain (dB)
20.0
19.8
20.0
P1dB
(dBm)
52.7
52.8
52.8
(W)
186
191
191
D
(%)
64.9
64.2
64.2
AM/PM
()
16
16
17
(dBm)
54.3
53.4
54.2
(W)
269
219
263
P3dB
D
(%)
66.2
65.4
65.5
AM/PM
()
20
24
22
(1) Load impedance for optimum P1dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Z
source
Z
in
Device
Under
Test
Z
load
Output Load Pull
Tuner and Test
Circuit
Figure 10. Load Pull Performance — Maximum Drain Efficiency Tuning
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
