C106 Series
MAXIMUM RATINGS —
continued
Rating
Peak Reverse Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque(1)
Symbol
VGRM
TJ
Tstg
—
Value
6
–40 to +110
–40 to +150
6
Unit
Volts
°C
°C
in. lb.
1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum
results, an activated flux (oxide removing) is recommended.
THERMAL CHARACTERISTICS
(TC = 25°C, RGK = 1 kΩ unless otherwise noted.)
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θJA
Max
3
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) TJ = 25°C
TJ = 110°C
Forward “On” Voltage
(IFM = 1 A Peak)
Gate Trigger Current (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms)
(VAK = 6 Vdc, RL = 100 Ohms, TC = –40°C)
Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms, RGK = 1000 Ohms)
(VAK = Rated VDRM, RL = 3000 Ohms,
RGK = 1000 Ohms, TJ = 110°C)
Holding Current
(VD = 12 Vdc, RGK = 1000 Ohms)
Forward Voltage Application Rate
(TJ = 110°C, RGK = 1000 Ohms, VD = Rated VDRM)
Turn-On Time
Turn-Off Time
TJ = 25°C
TJ = –40°C
TJ = 25°C
TJ = –40°C
TJ = +110°C
IHX
Symbol
IDRM, IRRM
—
—
VTM
IGT
—
—
VGT
0.4
0.5
0.2
0.3
0.4
0.14
—
—
—
—
—
—
—
—
—
8
1.2
40
0.8
1
—
3
6
2
—
—
—
mA
30
75
200
500
Volts
—
—
—
—
10
100
2.2
Min
Typ
Max
Unit
µA
µA
Volts
µA
dv/dt
tgt
tq
V/µs
µs
µs
P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS)
FIGURE 1 – AVERAGE CURRENT DERATING
110
100
TC, CASE TEMPERATURE (
°
C)
90
80
70
60
50
40
30
20
10
0
.4
.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
DC
FIGURE 2 – MAXIMUM ON-STATE POWER DISSIPATION
10
JUNCTION TEMPERATURE
≈
110°C
8
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
DC
6
4
2
0
0
.4
.8
1.2
1.6
2.0
2.4
2.6
3.2
3.6
4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
2
Motorola Thyristor Device Data
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
