MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by C106/D
Silicon Controlled Rectifier
Reverse Blocking Triode Thyristors
. . . Glassivated PNPN devices designed for high volume consumer applications such
as temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
•
•
•
•
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
C106
Series *
*Motorola preferred devices
SCRs
4 AMPERES RMS
50 thru 600 VOLTS
G
A
K
A
G
A
K
CASE 77-08
(TO-225AA)
STYLE 2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(RGK = 1 kΩ)
C106F
(TC = –40° to 110°C)
C106A
C106B
C106D
C106M
RMS Forward Current
(All Conduction Angles)
Average Forward Current
(TA = 30°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing (t = 8.3 ms)
Peak Gate Power
Average Gate Power
Peak Forward Gate Current
Symbol
VDRM
or
VRRM
Value
50
100
200
400
600
4
2.55
20
1.65
0.5
0.1
0.2
Amps
Amps
Amps
A2s
Watt
Watt
Amp
Unit
Volts
IT(RMS)
IT(AV)
ITSM
I2t
PGM
PG(AV)
IGFM
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a
constant current source such that the voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
