TYPICAL CHARACTERISTICS
1000
Measured with
±30
mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc
C, CAPACITANCE (pF)
C
iss
C
oss
I
DS
, DRAIN CURRENT (AMPS)
7
6
5
4
3
2
1
2.75 Vdc
0
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
Note:
Measured with both sides of the transistor tied together.
3.25 Vdc
3 Vdc
T
A
= 25°C
V
GS
= 4.25 Vdc
4 Vdc
3.75 Vdc
3.5 Vdc
100
10
C
rss
1
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Drain Current versus Drain-
-Source Voltage
10
9
10
8
I
D
= 2.5 Amps
MTTF (HOURS)
10
7
10
6
3.9 Amps
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
3.2 Amps
V
DD
= 13.6 Vdc
Figure 4. MTTF versus Junction Temperature - CW
-
AFT05MS031NR1 AFT05MS031GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
