Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
P
D
T
J
Value
--0.5, +40
--6.0, +12
17, +0
--65 to +150
294
1.47
225
Unit
Vdc
Vdc
Vdc
°C
W
W/°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 31 W CW, 13.6 Vdc, I
DQ
= 10 mA, 520 MHz
Symbol
R
θJC
Value
(2,3)
0.67
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
A, passes 100 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 13.6 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 115
μAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.2 Adc)
Forward Transconductance
(V
GS
= 10 Vdc, I
D
= 7.5 Adc)
V
GS(th)
V
DS(on)
g
fs
1.6
—
—
2.1
0.13
5.8
2.6
—
—
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
2
1
600
μAdc
μAdc
nAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT05MS031NR1 AFT05MS031GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
