Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 - Off Characteristics
(1)
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 - On Characteristics
(1)
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2A
= 260 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2A
= 260 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
GS(th)
V
GSA(Q)
V
GGA(Q)
V
DS(on)
1.2
—
5.5
0.1
2.0
2.7
6.3
0.24
2.7
—
7.5
1.2
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3,4)
(In Freescale Doherty Production Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1(A+B)
= 80 mA, I
DQ2A
= 260 mA,
V
GS2B
= 1.4 Vdc, P
out
= 12 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
PAE
PAR
ACPR
27.6
33.5
6.2
—
28.2
36.9
6.6
--34.2
32.0
—
—
--31.5
dB
%
dB
dBc
Typical Broadband Performance
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1(A+B)
= 80 mA,
I
DQ2A
= 260 mA, V
GS2B
= 1.4 Vdc, P
out
= 12 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
1.
2.
3.
4.
G
ps
(dB)
28.8
29.0
29.2
PAE
(%)
38.2
37.9
37.4
Output PAR
(dB)
7.1
7.1
6.9
ACPR
(dBc)
--34.6
--36.2
--36.1
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
