Freescale Semiconductor
Technical Data
Document Number: MD7IC2251N
Rev. 0, 5/2012
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2251N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2110 -- 2170 MHz. This multi -- stage
structure is rated for 26 to 32 volt operation and covers all typical cellular
base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
V
DD
= 28 Volts, I
DQ1(A+B)
= 80 mA, I
DQ2A
= 260 mA, V
GS2B
= 1.4 Vdc,
P
out
= 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
28.8
29.0
29.2
PAE
(%)
38.2
37.9
37.4
Output PAR
(dB)
7.1
7.1
6.9
ACPR
(dBc)
--34.6
--36.2
--36.1
MD7IC2251NR1
MD7IC2251GNR1
2110-
-2170 MHz, 12 W AVG., 28 V
SINGLE W-
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO-
-270 WB-
-14
PLASTIC
MD7IC2251NR1
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
58 Watts
(1)
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
•
•
•
•
•
•
Production Tested in a Symmetrical Doherty Configuration
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
(2)
Integrated ESD Protection
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
TO-
-270 WB-
-14 GULL
PLASTIC
MD7IC2251GNR1
V
DS1A
RF
inA
CARRIER
(3)
RF
out1
/V
DS2A
V
GS1A
V
GS2A
V
GS1B
V
GS2B
Quiescent Current
Temperature Compensation
(2)
Quiescent Current
Temperature Compensation
(2)
PEAKING
(3)
V
DS1A
V
GS2A
V
GS1A
RF
inA
NC
NC
NC
NC
RF
inB
V
GS1B
V
GS2B
V
DS1B
Carrier
1
2
14
3
4
5
6
7
8
9
13
10
11
12 Peaking
(Top View)
RF
out1
/V
DS2A
RF
out2
/V
DS2B
RF
inB
V
DS1B
RF
out2
/V
DS2B
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where output
PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
3. Peaking and Carrier orientation is determined by the test fixture design.
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
MD7IC2251NR1 MD7IC2251GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
