TYPICAL CHARACTERISTICS
1000
100
10
100
C
iss
C
oss
10
Measured with ±30 mV(rms)ac @ 1 MHz
V
= 0 Vdc
GS
C
rss
T
= 25°C
C
1
1
0
10
V
20
30
40
50
1
10
100
200
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
DS
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. DC Safe Operating Area
5
27
I
= 675 mA
26
25
DQ
4
563 mA
450 mA
V
= 3 V
GS
3
2
1
2.75 V
24
23
22
21
337 mA
2.63 V
2.5 V
V
= 50 Vdc
225 mA
DD
f = 220 MHz
2.25 V
120
0
0
20
40
60
80
100
1
10
, OUTPUT POWER (WATTS) CW
100
200
P
DRAIN VOLTAGE (VOLTS)
out
Figure 6. DC Drain Current versus Drain Voltage
Figure 7. CW Power Gain versus Output Power
58
56
54
52
-- 10
-- 15
-- 20
V
= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
DD
Two--Tone Measurements, 100 kHz Tone Spacing
Ideal
P3dB = 52.61 dBm (182.39 W)
P1dB = 52.27 dBm (168.66 W)
I
= 225 mA
DQ
-- 25
-- 30
-- 35
-- 40
-- 45
-- 5 0
-- 5 5
-- 6 0
336 mA
450 mA
Actual
563 mA
685 mA
50
48
900 mA
V
= 50 Vdc, I = 450 mA
DQ
DD
f = 220 MHz
22
24
26
28
30
32
5
10
100
, OUTPUT POWER (WATTS) PEP
300
P , INPUT POWER (dBm)
P
in
out
Figure 9. CW Output Power versus Input Power
Figure 8. Third Order Intermodulation Distortion
versus Output Power
MRF6V2150NR1 MRF6V2150NBR1
RF Device Data
Freescale Semiconductor
5
FREESCALE [ Freescale ]
