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ATC200B393KT50XT 参数 Datasheet PDF下载

ATC200B393KT50XT图片预览
型号: ATC200B393KT50XT
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场 - 效果晶体管N - 沟道增强 - 模式横向的MOSFET [RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs]
分类和应用: 晶体晶体管射频
文件页数/大小: 18 页 / 1498 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 75 mA, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 450 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
f = 27 MHz
f = 450 MHz
f = 27 MHz
f = 450 MHz
f = 27 MHz
f = 450 MHz
C
rss
C
oss
C
iss
1.6
93
163
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
1.5
1.62
2.6
0.26
3
3.5
Vdc
Vdc
Vdc
I
DSS
I
DSS
V
(BR)DSS
I
GSS
110
2.5
50
10
mA
μAdc
Vdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 450 mA, P
out
= 150 W, f = 220 MHz, CW
G
ps
η
D
IRL
G
ps
η
D
IRL
23.5
66
25
68.3
--17
32.3
22.9
78.7
57.6
--10.6
--17.6
26.5
--9
dB
%
dB
dB
%
dB
Typical Performances
(In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 450 mA, P
out
= 150 W CW
ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
MRF6V2150NR1 MRF6V2150NBR1
2
RF Device Data
Freescale Semiconductor