Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 150 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 800
μAdc)
Gate Quiescent Voltage
(2)
(V
DD
= 50 Vdc, I
D
= 2600 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.7
101
287
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
1.5
—
1.65
2.7
0.25
3
3.5
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
50
2.5
μAdc
Vdc
μAdc
mA
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 2600 mA, P
out
= 125 W Avg., f = 225 MHz, DVB--T
OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
±4
MHz Offset.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
ACPR
IRL
G
ps
η
D
IRL
24
27
—
—
—
—
—
25
28.5
--61
--18
22
68
--15
27
—
--59
--9
—
—
—
dB
%
dBc
dB
dB
%
dB
Typical Performance — 352.2 MHz
(In Freescale 352.2 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 600 W CW
Typical Performance — 88-
-108 MHz
(In Freescale 88--108 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 600 W
CW
Power Gain
Drain Efficiency
Input Return Loss
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
G
ps
η
D
IRL
—
—
—
24.5
74
--5
—
—
—
dB
%
dB
MRF6VP2600HR6
2
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
