TYPICAL CHARACTERISTICS
−10
58
57
V
DD
= 28 Vdc, P = 160 W (PEP), I = 1800 mA
DQ
Ideal
out
P3dB = 54.32 dBm (270.33 W)
Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 2645 MHz
56
55
3rd Order
5th Order
−30
P1dB = 53.64 dBm (231.15 W)
54
53
52
51
50
Actual
−40
−50
−60
V
DD
= 28 Vdc, I = 1800 mA
DQ
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2645 MHz
7th Order
34
35
36
37
38
39
40
41
42
0.1
1
10
100
TWO−TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
35
−35
V
DD
= 28 Vdc, I = 1800 mA, f = 2645 MHz
DQ
Single−Carrier N−CDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB @ 0.01%
Probability (CCDF)
30
25
20
15
10
−40
−45
−50
−55
G
ps
−60
ALT1
ACPR
10
5
0
−65
η
D
−70
100
1
P , OUTPUT POWER (WATTS) AVG. W−CDMA
out
Figure 9. Single-Carrier N-CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
20
15
10
5
50
16
15
14
13
G
ps
40
30
20
10
0
32 V
28 V
12
11
10
V
DD
= 24 V
V
= 28 Vdc
= 1800 mA
DD
0
I
DQ
f = 2645 MHz
I
= 1800 mA
f = 2645 MHz
DQ
η
D
−5
0
60
120
180
240
300
0.1
1
10
100
400
P , OUTPUT POWER (WATTS) CW
out
P , OUTPUT POWER (WATTS) CW
out
Figure 11. Power Gain versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
6
FREESCALE [ Freescale ]
