PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Dec. 2008
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Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table; related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Corrected V to V in the RF test condition voltage callout for V , and added “Measured in
GS(Q)
DS
DD
Functional Test”, On Characteristics table, p. 2
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
•
•
Changed “Z2, Z31” to “Z2, Z30” and “Z3, Z30” to “Z3, Z31” in Z list for Fig. 1, Test Circuit Schematic, p. 3
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
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Adjusted scale for Fig. 5, Two-Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 5
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
2
Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps and listed
operating characteristics and location of MTTF calculator for device, p. 7
Added Product Documentation and Revision History, p. 10
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
10
FREESCALE [ Freescale ]
