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ATC100B3R3CT500XT 参数 Datasheet PDF下载

ATC100B3R3CT500XT图片预览
型号: ATC100B3R3CT500XT
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管 [RF Power Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 11 页 / 492 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Freescale Semiconductor
Technical Data
Document Number: MRF6P27160H
Rev. 2, 12/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2600 to
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
Typical Single- Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1800 mA, P
out
= 35 Watts Avg., f = 2660 MHz, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.6 dB
Drain Efficiency — 22.6%
ACPR @ 885 kHz Offset — - 47.8 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P27160HR6
2600- 2700 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 160 W CW
Case Temperature 71°C, 35 W CW
Symbol
R
θJC
Value
(2,3)
0.29
0.31
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
MRF6P27160HR6
1
RF Device Data
Freescale Semiconductor