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ATC100B241JT500XT 参数 Datasheet PDF下载

ATC100B241JT500XT图片预览
型号: ATC100B241JT500XT
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管N - 沟道增强 - 模式横向的MOSFET [RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 15 页 / 822 K
品牌: FREESCALE [ Freescale ]
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PRODUCT DOCUMENTATION AND SOFTWARE  
Refer to the following documents to aid your design process.  
Application Notes  
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages  
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages  
Engineering Bulletins  
EB212: Using Data Sheet Impedances for RF LDMOS Devices  
Software  
Electromigration MTTF Calculator  
RF High Power Model  
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &  
Tools tab on the part’s Product Summary page to download the respective tool.  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
1
2
July 2008  
Oct. 2008  
Mar. 2009  
Initial Release of Data Sheet  
Added Fig. 13, MTTF versus Junction Temperature, p. 6  
Corrected Z , “0.40 + j5.93” to “0.39 + j1.26” and Z  
, “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series  
load  
source  
Equivalent Source and Load Impedance data table and replotted data, p. 7  
3
Apr. 2010  
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related  
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C  
in Capable Plastic Package bullet, p. 1  
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,  
p. 14  
MRF6V4300NR1 MRF6V4300NBR1  
RF Device Data  
Freescale Semiconductor  
14  
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