Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
VSWR 10:1 at 32 Vdc, 269 W CW Output Power
(3 dB Input Overdrive from 182 W CW Rated Power)
Symbol
Min
Typ
Max
Unit
Load Mismatch
(In Freescale Test Fixture, 50 ohm system) I
DQ
= 1500 mA, f = 2140 MHz
No Device Degradation
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, 2110--2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
AFT21S230S
AFT21S232S
Gain Flatness in 60 MHz Bandwidth @ P
out
= 50 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
(1)
G
F
G
P1dB
—
—
—
P1dB
—
—
182
(1)
--19.3
—
—
W
VBW
res
—
95
60
0.5
0.016
0.007
—
MHz
—
—
—
dB
dB/C
dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
3
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
