ATC100B0R6BT500XT 参数 Datasheet PDF下载

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature Range

Operating Junction Temperature Range

(1,2)

CW Operation @ T

C

= 25C

Derate above 25C

Symbol

V

DSS

V

GS

V

DD

T

stg

T

C

T

J

CW

Value

--0.5, +65

--6.0, +10

32, +0

--65 to +150

--40 to +150

--40 to +225

163

0.79

Unit

Vdc

Vdc

Vdc

C

C

C

W

W/C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80C, 50 W CW, 28 Vdc, I

DQ

= 1500 mA, 2110 MHz

Case Temperature 86C, 140 W CW

(4)

, 28 Vdc, I

DQ

= 1500 mA, 2110 MHz

Symbol

R

JC

Value

(2,3)

0.43

0.38

Unit

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Class

2

B

IV

Table 4. Electrical Characteristics

(T

A

= 25C unless otherwise noted)

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(V

DS

= 65 Vdc, V

GS

= 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(V

DS

= 28 Vdc, V

GS

= 0 Vdc)

Gate--Source Leakage Current

(V

GS

= 5 Vdc, V

DS

= 0 Vdc)

On Characteristics

Gate Threshold Voltage

(V

DS

= 10 Vdc, I

D

= 291

Adc)

Gate Quiescent Voltage

(V

DD

= 28 Vdc, I

D

= 1500 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(V

GS

= 10 Vdc, I

D

= 3.7 Adc)

V

GS(th)

V

GS(Q)

V

DS(on)

1.5

2.2

0.1

2.0

2.7

0.2

2.5

3.2

0.3

Vdc

Vdc

Vdc

I

DSS

I

DSS

I

GSS

—

—

—

—

—

—

10

1

1

Adc

Adc

Adc

Symbol

Min

Typ

Max

Unit

Functional Tests

(5)

(In Freescale Test Fixture, 50 ohm system) V

DD

= 28 Vdc, I

DQ

= 1500 mA, P

out

= 50 W Avg., f = 2110 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @

5

MHz Offset.

Power Gain

Drain Efficiency

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

Adjacent Channel Power Ratio

Input Return Loss

G

ps



D

PAR

ACPR

IRL

16.0

29.0

6.7

—

—

16.7

30.5

7.2

--35.7

--19

19.0

—

—

--34.0

--10

dB

%

dB

dBc

dB

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

5. Part internally matched both on input and output.

(continued)

AFT21S230SR3 AFT21S232SR3

2

RF Device Data

Freescale Semiconductor, Inc.