Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ Unit
= 90 mA, I = 420 mA,
DQ2
Max
Functional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
DQ1
P
out
= 4 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB
@ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
28
12
—
—
30
14
33
—
dB
%
ps
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
PAE
ACPR
IRL
-50
-16
-46
-12
dBc
dB
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 90 mA, I
= 420 mA, 2110-2170 MHz
DD
DQ1
DQ2
P
@ 1 dB Compression Point, CW
P1dB
VBW
—
40
10
—
W
out
Video Bandwidth @ 40 W PEP P where IM3 = -30 dBc
MHz
out
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
—
—
Gain Flatness in 60 MHz Bandwidth @ P = 4 W Avg.
G
—
—
0.1
—
—
dB
out
F
Average Deviation from Linear Phase in 60 MHz Bandwidth
Φ
1.08
°
@ P = 40 W CW
out
Average Group Delay @ P = 40 W CW, f = 2140 MHz
Delay
—
—
1.98
18.3
—
—
ns
out
Part-to-Part Insertion Phase Variation @ P = 40 W CW,
ΔΦ
°
out
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
—
0.05
—
—
dB/°C
Output Power Variation over Temperature
ΔP1dB
0.004
dBm/°C
(-30°C to +85°C)
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
RF Device Data
Freescale Semiconductor
4
FREESCALE [ Freescale ]
