Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
- 0.5, +65
- 0.5, +5
32, +0
- 65 to +150
150
225
20
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
4 W Avg.
(P
out
= 3.95 W Avg., Case Temperature = 68°C) Stage 1, 28 Vdc, I
DQ1
= 90 mA
Stage 2, 28 Vdc, I
DQ2
= 420 mA
40 W Avg.
(P
out
= 39.4 W Avg., Case Temperature = 80°C) Stage 1, 28 Vdc, I
DQ1
= 90 mA
Stage 2, 28 Vdc, I
DQ2
= 420 mA
Symbol
R
θJC
3.9
1.3
Value
(2,3)
Unit
°C/W
3.2
1.2
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
II (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
2
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
