Peripheral operating requirements and behaviors
Table 10. Flash characteristics (continued)
C
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
C
Characteristic
NVM Bus frequency
Symbol
fNVMBUS
fNVMOP
tVFYALL
tRD1BLK
tRD1BLK
tRD1SEC
tDRD1SEC
tRDONCE
tPGM2
Min1
Typical2
Max3
25
Unit4
MHz
MHz
tcyc
1
—
NVM Operating frequency
Erase Verify All Blocks
Erase Verify Flash Block
Erase Verify EEPROM Block
Erase Verify Flash Section
Erase Verify EEPROM Section
Read Once
0.8
—
1.05
17030
16977
843
—
—
—
—
tcyc
—
—
tcyc
—
—
517
tcyc
0.10
—
0.10
—
0.11
455
ms
tcyc
Program Flash (2 word)
Program Flash (4 word)
Program Once
0.12
0.20
0.20
0.02
0.17
96.01
95.98
19.10
4.81
96.01
—
0.12
0.21
0.21
0.02
0.18
100.78
100.75
20.05
5.05
100.78
—
0.14
0.24
0.24
0.02
0.20
125.80
125.76
25.05
6.30
125.80
469
ms
tPGM4
ms
tPGMONCE
tDPGM1
tDPGM2
tERSALL
tERSBLK
tERSPG
ms
Program EEPROM (1 Byte)
Program EEPROM (2 Byte)
Erase All Blocks
ms
ms
ms
Erase Flash Block
ms
Erase Flash Sector
ms
Erase EEPROM Sector
Unsecure Flash
tDERSPG
tUNSECU
tVFYKEY
tMLOADU
nFLPE
ms
ms
Verify Backdoor Access Key
Set User Margin Level
tcyc
—
—
442
tcyc
FLASH Program/erase endurance TL to
TH = -40 °C to 105 °C
10 k
100 k
—
Cycles
C
C
EEPROM Program/erase endurance TL
to TH = -40 °C to 105 °C
nFLPE
tD_ret
50 k
15
500 k
100
—
—
Cycles
years
Data retention at an average junction
temperature of TJavg = 85°C after up to
10,000 program/erase cycles
1. Minimun times are based on maxmum fNVMOP and maximum fNVMBUS
2. Typical times are based on typical fNVMOP and maximum fNVMBUS
3. Maximum times are based on minimum fNVMOP and maximum fNVMBUS
4. tcyc = 1 / fNVMBUS
Program and erase operations do not require any special power sources other than the
normal VDD supply. For more detailed information about program/erase operations, see
the Memory section.
6.3 Analog
MC9S08PA60 Series Data Sheet, Rev. 1, 10/9/2012.
20
Freescale Semiconductor, Inc.