欢迎访问ic37.com |
会员登录 免费注册
发布采购

908E621_12 参数 Datasheet PDF下载

908E621_12图片预览
型号: 908E621_12
PDF下载: 下载PDF文件 查看货源
内容描述: 综合四半桥和三重高端嵌入式微控制器和LIN高端镜 [Integrated Quad Half bridge and Triple High Side Embedded MCU and LIN for High End Mirror]
分类和应用: 微控制器
文件页数/大小: 60 页 / 1180 K
品牌: FREESCALE [ Freescale ]
 浏览型号908E621_12的Datasheet PDF文件第6页浏览型号908E621_12的Datasheet PDF文件第7页浏览型号908E621_12的Datasheet PDF文件第8页浏览型号908E621_12的Datasheet PDF文件第9页浏览型号908E621_12的Datasheet PDF文件第11页浏览型号908E621_12的Datasheet PDF文件第12页浏览型号908E621_12的Datasheet PDF文件第13页浏览型号908E621_12的Datasheet PDF文件第14页  
ELECTRICAL CHARACTERISTICS  
STATIC ELECTRICAL CHARACTERISTICS  
Table 3. Static Electrical Characteristics (continued)  
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller  
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40 °C TJ 125 °C, unless otherwise noted. Typical values  
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
LIN PHYSICAL LAYER  
LIN Transceiver Output Voltage  
V
Recessive State, TXD HIGH, IOUT = 1.0 μA  
Dominant State, TXD LOW, 500 Ω External Pull-up Resistor  
VLIN_REC  
VLIN_DOM  
VSUP-1  
1.4  
Normal Mode Pull-up Resistor to VSUP  
Stop, Sleep Mode Pull-up Current Source  
Output Current Shutdown Threshold  
Output Current Shutdown Timing  
Leakage Current to GND  
RPU  
20  
30  
20  
230  
47  
kΩ  
μA  
mA  
µs  
IPU  
IBLIM  
100  
5.0  
280  
40  
IBLS  
V
SUP Disconnected, VBUS at 18 V  
IBUS  
1.0  
3.0  
10  
20  
µA  
µA  
0.0  
-1.0  
Recessive state, 8.0 V VSUP 18 V, 8.0 V VBUS 18 V, VBUS VSUP  
IBUS-PAS-REC  
IBUS-NOGND  
1.0  
mA  
GND Disconnected, VGND = VSUP, VBUS at -18 V  
LIN Receiver  
VSUP  
VBUS_DOM  
VBUS_REC  
VBUS_CNT  
VBUS_HYS  
0.6  
0.475  
0.4  
Receiver Threshold Dominant  
Receiver Threshold Recessive  
Receiver Threshold Center  
Receiver Threshold Hysteresis  
0.5  
0.525  
0.175  
HIGH SIDE OUTPUT HS1  
Switch On Resistance  
mΩ  
TJ = 25 °C, ILOAD = 1.0 A  
RDS(ON)-HS1  
185  
225  
Over-current Shutdown  
IHSOC1  
tOCB  
6.0  
9.0  
A
Over-current Shutdown blanking time(14)  
4-8  
1.2  
µs  
Current to Voltage Ratio(15)  
CRRATIOHS1  
0.84  
1.56  
V/A  
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2.0 A)  
High Side Switching Frequency(14)  
fPWMHS  
VHSF  
25  
kHz  
V
High Side Freewheeling Diode Forward Voltage  
0.9  
TJ = 25 °C, ILOAD = 1.0 A  
Leakage Current  
ILeakHS  
<0.2  
10  
µA  
Notes  
14. This parameter is guaranteed by process monitoring but is not production tested.  
15. This parameter is guaranteed only if correct trimming was applied.  
908E621  
Analog Integrated Circuit Device Data  
Freescale Semiconductor  
10