TYPICAL CHARACTERISTICS - 900 MHz
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IRL
46
42
38
34
30
26
22
18
14
10
855
IM3
G
ps
V
DS
= 28 Vdc
P
out
= 0.9 W (PEP)
I
DQ
= 14 mA
Two −Tone Measurement
100 kHz Tone Spacing
η
D
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
50
−15
−17
−19
−21
−23
−25
−27
−29
−31
−33
865
870
875
880
885
890
895
900
−35
905
860
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
0
0.2
0.4
0.6
0.8
1.0
V
DS
= 28 Vdc
I
DQ
= 14 mA
f = 880 MHz
P1dB
G
ps
IMD, INTERMODULATION DISTORTION (dBc)
η
D
60
55
50
45
40
35
30
25
20
η
D
, DRAIN EFFICIENCY (%)
−25
−30
I
DQ
= 8 mA
−35
10 mA
−40
−45
−50
−55
0.01
0.1
18 mA
16 mA
14 mA
Two −Tone Measurement
100 kHz Tone Spacing
12 mA
1
10
V
DS
= 28 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
1.2
15
1.4
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. CW Performance versus Output
Power
Figure 5. Intermodulation Distortion versus
Output Power
−25
IMD, INTERMODULATION DISTORTION (dBc)
−30
−35
−40
−45
−50
−55
−60
−65
7th Order
−70
0.01
0.1
1
10
P
out
, OUTPUT POWER (WATTS) PEP
5th Order
Two −Tone Measurement
100 kHz Tone Spacing
3rd Order
V
DS
= 28 Vdc
I
DQ
= 14 mA
f1 = 880 MHz
f2 = 880.1 MHz
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
10 MHz
−45
1 MHz
Tone
Spacing = 100 kHz
0.1
V
DS
= 28 Vdc
I
DQ
= 14 mA
f1 = 880 MHz,
f2 = f1 + Tone Spacing
Two −Tone Measurement
1
10
−50
0.01
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Third Order Intermodulation
Distortion versus Output Power
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor