Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V = 65 Vdc, V = 0 Vdc)
I
I
I
—
—
—
—
—
—
10
10
1
µAdc
µAdc
µAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 V, I = 50 µA)
V
V
2
2
3
5
5
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 V, I = 10 mA)
3.7
DS
D
Drain-Source On-Voltage
(V = 10 V, I = 0.05 A)
V
—
—
0.48
0.05
0.9
—
GS
D
Forward Transconductance
(V = 10 V, I = 0.1 A)
g
fs
DS
D
Dynamic Characteristics
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
45
—
—
pF
pF
oss
GS
Reverse Transfer Capacitance
C
0.62
rss
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common Source Amplifier Power Gain
G
—
—
—
—
13
29
—
—
—
—
dB
%
ps
(V = 28 Vdc, P = 0.9 W PEP, I = 12 mA,
DD
out
DQ
f = 2170 MHz, Tone Spacing = 100 kHz)
Two-Tone Drain Efficiency
η
D
(V = 28 Vdc, P = 0.9 W PEP, I = 12 mA,
DQ
DD
out
f = 2170 MHz, Tone Spacing = 100 kHz)
Third Order Intermodulation Distortion
IMD
IRL
- 28
-18
dBc
dB
(V = 28 Vdc, P = 0.9 W PEP, I = 12 mA,
DQ
DD
out
f = 2170 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V = 28 Vdc, P = 0.9 W PEP, I = 12 mA,
DQ
DD
out
f = 2170 MHz, Tone Spacing = 100 kHz)
Output Power, 1 dB Compression Point, CW
P1dB
—
12
0.85
13
—
—
—
—
W
dB
%
(V = 28 Vdc, I
= 12 mA, f = 2170 MHz)
DD
DQ
Common-Source Amplifier Power Gain
G
ps
(V = 28 Vdc, P = 0.9 W CW, I
= 12 mA, f = 2170 MHz)
= 12 mA, f = 2170 MHz)
= 12 mA, f = 2170 MHz)
DD
out
DQ
DQ
DQ
Drain Efficiency
η
D
35
38
(V = 28 Vdc, P = 0.9 W CW, I
DD
out
Input Return Loss
IRL
-10
-16
dB
(V = 28 Vdc, P = 0.9 W CW, I
DD
out
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
2
FREESCALE [ Freescale ]
