System modules
8.4.1.1 Flash timing specifications — commands
Table 23. Flash command timing specifications
Symbol Description
Read 1s Block execution time
Min.
Typ.
Max.
Unit
Notes
trd1blk32k
• 32 KB data flash
—
—
—
—
0.5
1.7
ms
ms
trd1blk256k
• 256 KB program flash
trd1sec1k Read 1s Section execution time (data flash
sector)
—
—
—
—
60
60
μs
μs
1
1
trd1sec2k Read 1s Section execution time (program flash
sector)
tpgmchk
trdrsrc
Program Check execution time
Read Resource execution time
Program Longword execution time
Erase Flash Block execution time
• 32 KB data flash
—
—
—
—
—
65
45
30
μs
μs
μs
1
1
tpgm4
145
2
tersblk32k
—
—
55
465
985
ms
ms
tersblk256k
• 256 KB program flash
122
tersscr
Erase Flash Sector execution time
Program Section execution time
• 512 B program flash
• 512 B data flash
—
14
114
ms
2
tpgmsec512p
tpgmsec512d
tpgmsec1kp
tpgmsec1kd
—
—
—
—
2.4
4.7
4.7
9.3
—
—
—
—
ms
ms
ms
ms
• 1 KB program flash
• 1 KB data flash
trd1all
Read 1s All Blocks execution time
Read Once execution time
—
—
—
—
—
—
—
1.8
25
ms
μs
μs
ms
μs
trdonce
1
tpgmonce Program Once execution time
65
175
—
—
tersall
Erase All Blocks execution time
1500
30
2
1
tvfykey
Verify Backdoor Access Key execution time
Program Partition for EEPROM execution time
• 32 KB FlexNVM
tpgmpart32k
—
70
—
ms
Set FlexRAM Function execution time:
• Control Code 0xFF
tsetramff
tsetram8k
tsetram32k
—
—
—
50
0.3
0.7
—
μs
ms
ms
• 8 KB EEPROM backup
• 32 KB EEPROM backup
0.5
1.0
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
—
175
260
μs
3
Table continues on the next page...
MC56F844xx Advance Information Data Sheet, Rev. 2, 06/2012.
Freescale Semiconductor, Inc.
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