ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Table 3. Electrical Characteristics
Characteristics noted under conditions V
IN
= 12 V, V
OUT
= 42 V, ILED = 50 mA, PWM = VDC1, M/~S = VDC1,
PIN & NIN = VDC1, - 40°C
≤
T
A
≤
105°C, PGND = 0 V, unless otherwise noted.
Characteristic
SUPPLY
Supply Voltage
Supply Current when Shutdown Mode
Manual & SM Bus: EN = Low, SCK & SDA=Low
I C: EN = Low, SETI C bit = 1, CLRI C bit = 0
Supply Current when Sleep Mode
SM-Bus: EN = low, SCK & SDA= Active, SETI2C bit = 0, EN bit = 0
I
2
C: EN = High, SETI
2
C bit = 1, CLRI
2
C bit = 0, EN bit = 0
Supply Current when Operational Mode
Manual: EN= High, SCK & SDA=Low, PWM=Low
SM-Bus: EN= Low, SCK & SDA=Active, EN bit= 1, PWM=Low
I
2
C: EN = High, SETI
2
C bit = 1, CLRI
2
C bit = 0, EN bit = 1, PWM=Low
Under-voltage Lockout
V
IN
Rising
Under-voltage Hysteresis
V
IN
Falling
VDC1 Voltage
C
VDC1
= 2.2
μF
VDC2 Voltage
C
VDC2
= 2.2
μF
VDC3 Voltage
C
VDC3
= 2.2
μF
BOOST
Output Voltage Range
VIN = 7.0 V
VIN = 28 V
Boost Switch Current Limit
RDSON of Internal FET
I
DRAIN
= 1.0 A
Boost Switch Off-state Leakage Current
V
SWA,SWB
= 65 V
Peak Boost Efficiency
EFF
BOOST
-
90
-
%
I
BOOST_LEAK
-
-
10
V
OUT1
V
OUT2
I
FET
R
DSON
8.0
31
2.6
-
-
-
2.8
250
43
60
3.0
500
A
mΩ
V
V
DC3
2.4
2.5
2.6
V
V
DC2
5.5
6.0
6.5
V
V
DC1
2.4
2.5
2.6
V
UVLO
HYST
150
200
250
mV
UVLO
5.4
6.0
6.4
V
I
OPERATIONAL
-
10.0
-
mA
I
SLEEP
2
2
2
Symbol
Min
Typ
Max
Unit
V
IN
I
SHUTDOWN
7.0
12
28
V
-
-
-
2.0
17
3.0
-
-
-
μ
A
mA
μ
A
Notes
5. This output is for internal use only and not to be used for other purposes
6. Minimum and Maximum output voltages are dependent on Min/Max duty cycle condition.
7. Guaranteed by design
34844
6
Analog Integrated Circuit Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
