ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 2.7V ≤ VIN ≤ 5.5V, -20°C ≤ TA ≤ 85°C, GND = 0V, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
REGULATOR 4
Output Voltage Range
Output Accuracy
VOUT
-
0.6
1.8
-
3.6
2.0
1.0
10
-
V
%
-2.0
Line/Load Regulation(9)
REGLN/LD
VDYN
-1.0
-
%
Dynamic Voltage Scaling Range
-10
-
%
Dynamic Voltage Scaling Step Size
VDYN_STEP
IOUT
-
1.0
100
1.5
2.25
-
%
Continuous Output Current(9)
-
300
-
mA
A
Li-Ion Battery Over-current Limit (Detected in buck high side FET)
Li-Ion Battery Short-circuit Current Limit (Detected in buck high side FET)
Li-Ion Battery Over-current Limit Accuracy
N-CH Buck Switch Power MOSFET RDS(ON)
N-CH Buck Synch. Power MOSFET RDS(ON)
N-CH Boost Switch Power MOSFET RDS(ON)
N-CH Boost Synch. Power MOSFET RDS(ON)
Discharge MOSFET RDS(ON)
ILIM_ION
ISHORT_ION
-
-
-
-
A
-20
20
-
%
RDS(ON) SW
RDS(ON) SY
RDS(ON) SW
RDS(ON) SY
RDS(ON) DIS
-
-
-
-
-
-
-
-
-
-
-
200
600
200
600
70
170
25
-
mΩ
mΩ
mΩ
mΩ
Ω
-
-
-
-
-
-
-
-
Thermal Shutdown Threshold(9)
TSD
-
°C
°C
μA
μA
μA
Thermal Shutdown Hysteresis(9)
TSD-HYS
-
PVIN4 Leakage Current (Off State) @25°C
SW4D Leakage Current (Off State) @25°C
SW4U Leakage Current (Off State) @25°C
REGULATOR 5
IPVIN4_LKG
ISW4D_LKG
ISW4U_LKG
1.0
1.0
1.0
-
-
Output Voltage Range
VOUT
-
0.6
3.3
-
3.6
V
%
Output Accuracy
-2.0
2.0
Line/Load Regulation(9)
REGLN/LD
VDYN
-1.0
-
1.0
%
Dynamic Voltage Scaling Range
-17.5
-
17.5
%
Dynamic Voltage Scaling Step Size
VDYN_STEP
IOUT
-
2.5
150
1.4
2.1
-
-
%
Continuous Output Current(9)
-
500
mA
A
Li-Ion Battery Over-current Limit (Detected in buck high side FET)
Li-Ion Battery Short-circuit Current Limit (Detected in buck high side FET)
Li-Ion Battery Over-current Limit Accuracy
N-CH Buck Switch Power MOSFET RDS(ON)
N-CH Buck Synch. Power MOSFET RDS(ON)
N-CH Boost Switch Power MOSFET RDS(ON)
N-CH Boost Synch. Power MOSFET RDS(ON)
Discharge MOSFET RDS(ON)
ILIM_ION
ISHORT_ION
-
-
-
-
-
A
-20
20
-
%
RDS(ON) SW
RDS(ON) SY
RDS(ON) SW
RDS(ON) SY
RDS(ON) DIS
-
-
-
-
-
-
-
-
120
1000
120
120
70
mΩ
mΩ
mΩ
mΩ
Ω
-
-
-
-
-
-
-
-
Thermal Shutdown Threshold(9)
TSD
170
25
-
°C
°C
Thermal Shutdown Hysteresis(9)
TSD-HYS
-
Notes:
9. Guaranteed by Design
34704
Analog Integrated Circuit Device Data
Freescale Semiconductor
11