ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 2.7 V ≤ VIN ≤ 5.5 V, -20°C ≤ TA ≤ 85°C, GND = 0 V, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
REGULATOR 2
Output Voltage Range
Output Accuracy
VOUT
-
0.6
3.3
3.6
V
%
-2.0
-
2.0
Line/Load Regulation(11)
REGLN/LD
-1.0
-
0.600(12)
-
1.0
%
Feedback Reference Voltage
V
-
-
V
FB
Dynamic Voltage Scaling Range
VDYN
VDYN_STEP
IOUT
-17.5
17.5
%
Dynamic Voltage Scaling Step Size
Continuous Output Current(11)
-
2.5
200
1.4
2.1
-
-
%
-
500
mA
A
Over-current Limit (Detected in buck high side FET)
Short-circuit Current Limit (Detected in buck high side FET)
Battery Over-current Limit Accuracy
N-CH Buck Switch Power MOSFET RDS(ON)
N-CH Buck Synch. Power MOSFET RDS(ON)
N-CH Boost Switch Power MOSFET RDS(ON)
N-CH Boost Synch. Power MOSFET RDS(ON)
Discharge MOSFET RDS(ON)
ILIM_ION
ISHORT_ION
-
-
-
-
-
A
-20
20
%
RDS(ON) SW
RDS(ON) SY
RDS(ON) SW
RDS(ON) SY
RDS(ON) DIS
-
-
-
-
-
-
-
-
-
-
-
120
1000
120
120
70
-
mΩ
mΩ
mΩ
mΩ
Ω
-
-
-
-
-
-
-
-
Thermal Shutdown Threshold(11)
TSD
170
25
-
°C
°C
μA
μA
μA
Thermal Shutdown Hysteresis(11)
PVIN2 Leakage Current (Off State) @25°C
SW2D Leakage Current (Off State) @25°C
SW2U Leakage Current (Off State) @25°C
REGULATOR 3
TSD-HYS
-
IPVIN2G_LKG
ISW2D_LKG
ISW2U_LKG
-
1.0
1.0
1.0
-
-
Output Voltage Range
VOUT
-
0.6
1.2
1.8
V
%
Output Accuracy
-4.0
-
4.0
Line/Load Regulation(11)
REGLN/LD
-1.0
-
1.0
%
0.600(12)
-
V
Feedback Reference Voltage
V
-
FB
Dynamic Voltage Scaling Range
VDYN
VDYN_STEP
IOUT
-17.5
-
17.5
%
Dynamic Voltage Scaling Step Size
Continuous Output Current(11)
-
2.5
150
1.0
1.5
-
-
%
-
550
mA
A
Over-current Limit (Detected in buck high side FET)
Short-circuit Current Limit (Detected in buck high side FET)
Over-current Limit Accuracy
ILIM_ION
ISHORT_ION
-
-
-
-
-
20
-
A
-20
%
N-CH Switch Power MOSFET RDS(ON)
N-CH Synch. Power MOSFET RDS(ON)
Discharge MOSFET RDS(ON)
Thermal Shutdown Threshold (11)
Thermal Shutdown Hysteresis(11)
PVIN3 Leakage Current (Off State) @25°C
SW3 Leakage Current (Off State) @25°C
RDS(ON) SW
RDS(ON) SY
RDS(ON) DIS
-
-
-
-
-
-
-
-
500
500
70
170
25
-
mΩ
mΩ
Ω
-
-
-
-
TSD
-
°C
°C
μA
μA
TSD-HYS
IPVIN3_LKG
ISW3_LKG
-
1.0
1.0
-
Notes:
11. Guaranteed by Design
12.
V
is 0.6V when the part ist powered up and no DVS is changed. DVS is achieved by modifying V reference.
FB FB
34704
Analog Integrated Circuit Device Data
Freescale Semiconductor
10
FREESCALE [ Freescale ]
