ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions -40°C ≤ TA ≤ 85°C unless otherwise noted. Input voltages VIN1 = VIN2 = 3.3 V using
the typical application circuit (see Figure 33) unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LINEAR REGULATOR (LDO)
LDO Feedback Voltage (16)
V
V
LFB
VIN1 = VIN2 = 2.8 V to 6.0 V, ILDO = 10 mA to 1000 mA. Includes Load
Regulation Error
0.784
–
0.800
1.0
–
0.816
–
LDO Voltage Margining Step Size
V
%
%
%
%
MLDO
LDO Voltage Margining Highest Positive Value
LDO Voltage Margining Lowest Negative Value
V
V
5.9
7.9
MP
MN
-7.9
–
-5.9
LDO Line Regulation (16)
REG
REG
V
LNVLDO
VIN1 = VIN2 = 2.8 V to 6.0 V, ILDO = 1000 mA
-1.0
-1.0
–
–
–
1.0
1.0
–
LDO Load Regulation (16)
ILDO = 10 mA to 1000 mA
%
LDVLDO
LDO Ripple Rejection, Dropout Voltage (16)
VDO = 1.0 V, VRIPPLE = +1.0 V p-p
dB
LDO_RR
40
Sinusoidal, f = 300 kHz, ILDO = 500 mA (15)
LDO Maximum Dropout Voltage (VIN - VLDO), using IRL2703 (16)
VLDO = 2.5 V, ILDO = 1000 mA
V
mV
DO
–
50
50
75
65
LDO Current Sense Comparator Threshold Voltage (VCS - VLDO)
LDO Pin Input Current, VLDO = 5.25 V
V
35
mV
mA
µA
CSTH
I
1.0
-1.0
-5.0
1.9
–
4.0
1.0
-2.0
LDO
LFB
LDO Feedback Input Current (LFB Pin), VLFB = 0.8 V
LDO Drive Output Current (LDRV Pin), VLDRV = 0 V
I
I
I
-3.3
mA
µA
LDRV
CSLK
CS Pin Input Leakage Current
VCS = 5.25 V
50
–
–
200
2.0
LDO Pulldown MOSFET Q4 Current Limit
I
A
LIMQ4
0.75
T
= 25°C, VBST = 8.0 V (LDO Pin)
A
LDO Pulldown MOSFET Q4 RDS(ON)
ID = 1.0 A, VBST = 8.0 V
R
Ω
DS(ON)Q4
–
–
–
1.9
–
LDO Recommended Output Capacitance
LDO Recommended Output Capacitor ESR
Thermal Shutdown (LDO Pull-down MOSFET Q4) (15)
Thermal Shutdown Hysteresis (15)
C
10
µF
mΩ
°C
LDO
RLDO
TSD
–
5.0
170
10
–
150
–
190
–
T
°C
SDHYS
Notes
15. Design information only. This parameter is not production tested.
16. IDO refers to Load Current on External LDOFET - IRL2703 is the Intersil MOSFET.
34701
Analog Integrated Circuit Device Data
Freescale Semiconductor
10