STATIC ELECTRICAL CHARACTERISTICS
Typical values noted reflect the approximate parameter mean at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic
MODE TERMINALS OPERATING VOLTAGES
Mode Control Terminals Low Voltage
Mode Control Terminals High Voltage
Mode Control Terminals Voltage with Input Floating
V
B
+
= 13 V to 14 V
SUPERVISOR CIRCUITRY (RST, VCORE)
Minimum Function V
B
+
for Charge Pump and Oscillator Running
Minimum V
B
+
for RST Assertion, V
B
+
Rising
RST
Low Voltage
STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 4.75 V
≤
V
IO
≤
5.25 V, 13 V
≤
V
B
+
≤
32 V, and 0°C
≤
T
J
≤
105°C unless otherwise noted.
Symbol
Min
Typ
Max
Unit
V
IL
(
Mode
n
)
–
V
IH
(
Mode
n
)
2.6
V
Mode
(
FLOAT
)
7.0
8.0
13
–
–
–
0.825
V
V
V
V
B
+
(
MIN
)
V
B+
(
ASSERT
)
V
OL
–
–
–
1.9
9.0
2.2
V
V
V
V
B
+
= 2.0 V, I
RST
≤
5.0 mA
RST
V
I / O
Threshold
–
0.25
0.4
V
I/O
(
NOM
)
V
V
I / O
Rising
V
I / O
Falling
RST
Hysteresis for V
I / O
RST
V
CORE
Threshold
V
I / O
T
+
V
I / O
T
-
V
HYSVI/O
V
CORET
+
V
CORE
T
-
V
HYS CORE
–
V
I/O
(
NOM
)
–
–
–
-
50 mV
–
100
-
300 mV
10
mV
V
V
CORE
Rising
V
CORE
Falling
RST
Hysteresis for V
CORE
–
V
CORE
(
NOM
)
–
–
V
CORE
(
NOM
)
-
30 mV
–
-
300 mV
10
mV
50
100
V
0.5
–
0.9
°C
–
–
–
20
170
–
°C
V
B
+
= 13 V to 32 V
V
CORE
-
V
I / O
for V
CORE
Shutdown
V
B
+
= 13 V to 32 V
Thermal Shutdown Temperature
T
J
Rising
Overtemperature Hysteresis
VB CHARGE PUMP
Boost Voltage
(11)
V
B
+
= 12 V, I
vb
= 0.5 mA
V
B
+
= 32 V, I
vb
= 0.5 mA
Notes
11. Bulk capacitor ESR
≤
10 milliohms
T
J
(
HYSTERESIS
)
TJ (
TSD
)
V
CORE
(
SHUTDOWN
)
V
V
B
V
B
V
B
+
8
V
B
+
10
V
B
+
9
V
B
+
12
V
B
+
10
V
B
+
14
34710
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
