ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions -40°C
≤
T
A
≤
125°C, 5.5 V
≤
V
IGNP
≤
24 V unless otherwise noted. Typical values
reflect approximate parameter mean at T
A
= 25°C under normal conditions unless otherwise noted.
Characteristic
High-Side (GDHn) and Low-Side Drivers (GDHn) Rise Time
(25% to 75%), C
ISS
Value = 2000 pF
Symbol
t
RH
Min
Typ
Max
Unit
µs
–
t
FH
–
t
D1,
t
D2
1.0
0.2
t
ILIMDELAY
1.5
0.35
1.5
µs
High-Side (GDHn) and Low-Side Drivers (GDHn) Fall Time
(75% to 25%), C
ISS
Value = 2000 pF
Shoot-Through Suppression Time Delay (33395)
33395
33395T
Current Limit Time Delay
0.25
1.5
µs
3.0
0.65
2.8
5.5
1.0
5.0
µs
Notes
8. See
9. Shoot-Through Suppression Time Delay is provided to prevent directly connected high- and low-side MOSFETs from being on
simultaneously.
10. Current Limit Time Delay: The internal comparator places the device in the current limit mode when the comparator output goes LOW
and sets an internal logic bit. This takes a finite amount of time and is stated as the Current Limit Time Delay.
TIMING DIAGRAM
GDHn SRCn (%)
100
75
25
0
t
D1
t
RH
t
FH
t
D2
t
RL
GDLn, Gate V (%)
100
75
25
0
t
FL
TIME
Figure 4. Shoot-Through Suppression
33395
8
Analog Integrated Circuit Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
